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參數資料
| 型號： | 2SJ55 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| P通道| 180V五（巴西）直| 8A條（?。﹟至3 |
| 文件頁數： | 5/12頁 |
| 文件大小： | 62K |
| 代理商： | 2SJ55 |
2SJ550(L),2SJ550(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–60
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–15
A
Drain peak current
I
D(pulse)
Note1
–60
A
Body-drain diode reverse drain current
I
DR
–15
A
Avalanche current
I
AP
Note3
–15
A
Avalanche energy
E
AR
Note3
19
mJ
Channel dissipation
Pch
Note2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg
≥ 50
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ56 | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-3 |
| 2SK1197 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK12 | TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | TO-17 |
| 2SK1200 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1201 | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4A I(D) | TO-247VAR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ550 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ550(S)(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 15A 3-Pin(2+Tab) LDPAK(S)-(1) T/R |
| 2SJ550L | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ550L-E | 制造商:Renesas Electronics Corporation 功能描述: |
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