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參數(shù)資料
| 型號： | 2SJ55 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| P通道| 180V五（巴西）直| 8A條（丁）|至3 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 62K |
| 代理商： | 2SJ55 |
2SJ550(L),2SJ550(S)
4
Main Characteristics
0.1
0.3
1
3
10
30
100
–20
–16
–12
–8
–4
0
–10 V
–2
–4
–6
–8
–10
–6 V
–20
–16
–12
–8
–4
0
Tc = 75°C
25°C
–25°C
–1
–2
–3
–4
–5
V
= –10 V
DS
Pulse Test
80
60
40
20
0
50
100
150
200
1000
300
100
30
10
3
1
0.3
0.1
Ta = 25 °C
1 ms
10 s
100
s
PW
=
10
ms
(1shot)
DC
Operation
(Tc
=
25°C)
–3.5 V
V
= –2.5 V
GS
–4 V
–3 V
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
Pulse Test
Operation in
this area is
limited by R DS(on)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ56 | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-3 |
| 2SK1197 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK12 | TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | TO-17 |
| 2SK1200 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK1201 | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4A I(D) | TO-247VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ550 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ550(S)(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 15A 3-Pin(2+Tab) LDPAK(S)-(1) T/R |
| 2SJ550L | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ550L-E | 制造商:Renesas Electronics Corporation 功能描述: |
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