型號(hào): | 2SJ652 |
元件分類(lèi): | JFETs |
英文描述: | 28 A, 60 V, 0.0555 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
封裝: | TO-220ML, FULL PACK-3 |
文件頁(yè)數(shù): | 2/4頁(yè) |
文件大?。?/td> | 33K |
代理商: | 2SJ652 |
相關(guān)PDF資料 |
PDF描述 |
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2SK3706 | 12 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
2SK372-Y | N-CHANNEL, Si, SMALL SIGNAL, JFET |
2SK372 | N-CHANNEL, Si, SMALL SIGNAL, JFET |
2SK372-V | N-CHANNEL, Si, SMALL SIGNAL, JFET |
2SK373-GR | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
---|---|
2SJ652_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
2SJ652-1E | 功能描述:MOSFET PCH 4V DRIVE SERIES RoHS:否 制造商:NXP Semiconductors 晶體管極性:N-Channel 汲極/源極擊穿電壓:30 V 閘/源擊穿電壓: 漏極連續(xù)電流:180 mA 電阻汲極/源極 RDS(導(dǎo)通):4.5 Ohms 配置: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-416 封裝:Reel |
2SJ652-1EX | 制造商:ON Semiconductor 功能描述:PCH 4V DRIVE SERIES |
2SJ652-RA11 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
2SJ653 | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 60V 37A TO-220ML |