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參數(shù)資料
| 型號(hào)： | 2SK1169 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2SK1169 |
2SK1169, 2SK1170
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1169 V
(BR)DSS
2SK1170
450
—
—
V
I
D
= 10 mA, V
GS
= 0
breakdown voltage
500
Gate to source breakdown
voltage
V
(BR)GSS
±
30
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
250
μ
A
μ
A
V
GS
=
±
25 V, V
DS
= 0
V
DS
= 360 V, V
GS
= 0
V
DS
= 400 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 10 A, V
GS
= 10 V *
Zero gate voltage
2SK1169 I
DSS
2SK1170
—
—
drain current
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
Static Drain to source 2SK1169 R
DS(on)
on state resistance
—
0.20
0.25
1
2SK1170
—
0.22
0.27
Forward transfer admittance
|yfs|
10
16
—
S
I
D
= 10 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
1
Input capacitance
Ciss
—
2800
—
pF
Output capacitance
Coss
—
780
—
pF
Reverse transfer capacitance
Crss
—
90
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
32
—
ns
I
D
= 10 A, V
GS
= 10 V,
R
L
= 3
Rise time
—
115
—
ns
Turn-off delay time
—
200
—
ns
Fall time
—
90
—
ns
Body to drain diode forward
voltage
—
1.0
—
V
I
F
= 20 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
—
500
—
ns
I
F
= 20 A, V
= 0,
di
F
/dt = 100 A/
μ
s
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