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參數(shù)資料
| 型號： | 2SK1197 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 500mA的一（d）|對126VAR |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 47K |
| 代理商： | 2SK1197 |
2SK1167, 2SK1168
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1167 V
(BR)DSS
450
—
V
I
D = 10 mA, VGS = 0
breakdown voltage
2SK1168
500
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate voltage
2SK1167 I
DSS
—
250
A
V
DS = 360 V, VGS = 0
drain current
2SK1168
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source 2SK1167 R
DS(on)
—
0.25
0.36
I
D = 8 A, VGS = 10 V *
1
on state resistance
2SK1168
—
0.30
0.40
Forward transfer admittance
|yfs|
8
13
—
S
I
D = 8 A, VDS = 10 V *
1
Input capacitance
Ciss
—
2050
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
600
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
75
—
pF
Turn-on delay time
t
d(on)
—
30
—
ns
I
D = 8 A, VGS = 10 V,
Rise time
t
r
—
110
—
ns
R
L = 3.75
Turn-off delay time
t
d(off)
—
150
—
ns
Fall time
t
f
—70
—
ns
Body to drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 15 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
500
—
ns
I
F = 15 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
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| 2SK1199 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON N CHANNEL MOS FET |
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| 2SK1201 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4A I(D) | TO-247VAR |
| 2SK1202 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 5A I(D) | TO-247VAR |
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