參數(shù)資料
型號: 2SK1197
英文描述: Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
中文描述: 晶體管| MOSFET的| N溝道| 100V的五(巴西)直| 500mA的一(d)|對126VAR
文件頁數(shù): 7/9頁
文件大小: 47K
代理商: 2SK1197
2SK1167, 2SK1168
7
Reverse Drain Current vs.
Source to Drain Voltage
20
16
12
8
4
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Reverse
Drain
Current
I
DR
(A)
Pulse Test
5 V, 10 V
VGS = 0, –10 V
3
1.0
0.1
0.03
0.01
0.3
10
100
1 m
10 m
100 m
1
10
Pulse Width PW (s)
θch–c (t) = γ
S(t) θch–c
θch–c = 1.25°C/W,T
C = 25°C
PDM
PW
T
D =
T
PW
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized
Transient
Thermal
Impedance
γ S
(t)
TC = 25°C
0.01
0.05
0.02
0.2
0.1
0.5
1Shot
Pulse
D = 1
Vin Monitor
Vout Monitor
RL
50
Vin = 10 V
D.U.T
.
VDD = 30 V
.
Switching Time Test Circuit
Vin
10 %
90 %
10 %
td (on)
td (off)
tr
tf
Vout
10 %
Wavewforms
相關(guān)PDF資料
PDF描述
2SK12 TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | TO-17
2SK1200 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK1201 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4A I(D) | TO-247VAR
2SK1202 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK1204 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 8A I(D) | TO-247VAR
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