參數資料
型號: 2SK1197
英文描述: Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
中文描述: 晶體管| MOSFET的| N溝道| 100V的五(巴西)直| 500mA的一(d)|對126VAR
文件頁數: 5/9頁
文件大?。?/td> 47K
代理商: 2SK1197
2SK1167, 2SK1168
5
10
8
4
2
0
4
8
12
16
20
6
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
10 A
ID = 5 A
20 A
5
2
1.0
0.5
0.05
1
2
5
20
50
100
Drain Current ID (A)
0.1
0.2
Pulse Test
10
VGS = 10 V
15 V
Static
Drain
to
Source
on
State
Resistance
R
DS(on)
(
)
Static Drain to Source on State
Resistance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
0
40
80
120
160
Case Temperature TC (°C)
–40
Static Drain to Source on State
Resistance vs. Temperature
VGS = 10 V
Pulse Test
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
10 A
ID = 20 A
5 A
Forward Transfer Admittance vs. Drain Current
50
20
10
5
0.5
0.2
0.5
1.0
5
10
20
Drain Current ID (A)
1.0
2
75°C
–25°C
Forward
Transfer
Admittance
yfs
(S)
TC = 25°C
VDS = 20 V
Pulse Test
相關PDF資料
PDF描述
2SK12 TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | TO-17
2SK1200 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK1201 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4A I(D) | TO-247VAR
2SK1202 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK1204 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 8A I(D) | TO-247VAR
相關代理商/技術參數
參數描述
2SK1199 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON N CHANNEL MOS FET
2SK12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | TO-17
2SK1200 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-247VAR
2SK1201 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 4A I(D) | TO-247VAR
2SK1202 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 5A I(D) | TO-247VAR