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參數(shù)資料
| 型號(hào)： | 2SK1933-E |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-65, TO-3P, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 96K |
| 代理商： | 2SK1933-E |
2SK2514
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth(t)
-
Transient
Thermal
Resistance
-
C/
W
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|y
fs
|
-
Forward
Transfer
Admittance
-
S
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
m
0
10
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
to
Source
Cutoff
Voltage
-
V
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
m
20
1.0
10
0.001
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1 000
10
VDS = 10 V
Pulsed
1
10
100
1 000
100
1 000
20
30
Pulsed
40
10
100
Pulsed
0
1
VDS = 10 V
ID = 1 mA
–50
0
50
100
150
0
1
Single Pulse
40
2
60
VGS = 4 V
VGS = 10 V
TA = –25 C
25 C
75 C
125 C
Rth(ch-c) = 0.83 C/W
Rth(ch-a) = 41.7 C/W
ID = 25 A
100
80
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PDF描述 |
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| 2SK1933-E | 10 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| 2SK2774-01MR | 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1934(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1934-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1938 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1938-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK1938RF101 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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