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參數(shù)資料
| 型號： | 2SK1933-E |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-65, TO-3P, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 96K |
| 代理商： | 2SK1933-E |
2SK2514
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
m
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
ISD
-
Diode
Forward
Current
-
A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
1.0
0.1
0
–50
0
50
100
150
ID = 25 A
0.1
0
1
10
100
0.5
Pulsed
100
0.1
1 000
10 000
100 000
1
10
100
VGS = 0
f = 1 MHz
10
100
1 000
1.0
10
100
V
GS
-
Gate
to
Source
Voltage
-
V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
ID - Drain Current - A
trr
-
Reverse
Recovery
time
-
ns
di/dt = 100 A/ s
VGS = 0
1
0.1
10
1 000
1.0
10
100
1.0
1.5
VDD = 30 V
VGS = 10 V
RG = 10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Qg - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
40
80
120
20
40
60
80
2
4
6
8
10
12
14
16
0
10
20
30
40
VGS =4 V
VGS = 10 V
Ciss
Coss
Crss
VDD =12 V
30 V
48 V
VDS
VGS
td(off)
tf
td(on)
VDS
tr
VGS = 0
ID = 50 A
100
160
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1933-E | 10 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1945-01S | 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2774-01MR | 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1953 | 2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1960 | 3 A, 16 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1934(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1934-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1938 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1938-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK1938RF101 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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