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參數(shù)資料
| 型號： | 2SK1933-E |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-65, TO-3P, 3 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 96K |
| 代理商： | 2SK1933-E |
2SK2514
6
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system.
TEI-1202
Quality grade on NEC semiconductor devices.
IEI-1209
Semiconductor device mounting technology manual.
IEI-1207
Semiconductor device package manual.
IEI-1213
Guide to quality assurance for semiconductor devices.
MEI-1202
Semiconductor selection guide.
MF-1134
Power MOS FET features and application switching power supply.
TEA-1034
Application circuits using Power MOS FET.
TEA-1035
Safe operating area of Power MOS FET.
TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1933-E | 10 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1945-01S | 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2774-01MR | 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1953 | 2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1960 | 3 A, 16 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1934(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1934-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1938 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1938-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK1938RF101 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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