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參數資料
| 型號： | 2SK1933-E |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-65, TO-3P, 3 PIN |
| 文件頁數： | 3/7頁 |
| 文件大?。?/td> | 82K |
| 代理商： | 2SK1933-E |
2SK1933
Rev.3.00 Apr 27, 2006 page 3 of 6
Main Characteristics
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
Case Temperature TC (°C)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Drain
Current
I
D
(A)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Drain Current
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
150
200
0
100
50
150
200
100
50
3
1
0.1
1
30
100
10
0.3
0.05
3
10
300 1000
10
s
1 ms
DC
Operation
(Tc
=
25
°C)
100
s
PW
=
10
m
s (1
Shot)
Operation
in
this
area
is
limited
by
R
(on)
DS
30
10
8
6
4
2
010
20
30
40
50
10 V
Pulse Test
6 V
4 V
V
= 3.5 V
GS
5 V
10
8
6
4
2
02
4
6
8
10
Pulse Test
Tc = 25
°C
–25
°C
75
°C
V
= 20 V
DS
1.0
0.8
0.6
0.4
0.2
04
8
12
16
Pulse Test
2 A
I = 1 A
D
20
5 A
0.1
0.5
5
0.2
0.5
1
2
5
10
1
2
10
20
50
V
= 10 V
GS
Pulse Test
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK1934(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1934-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1938 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1938-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK1938RF101 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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