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參數(shù)資料
| 型號： | 2SK1933-E |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-65, TO-3P, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 82K |
| 代理商： | 2SK1933-E |
2SK1933
Rev.3.00 Apr 27, 2006 page 4 of 6
Case Temperature TC (°C)
Static Drain to Source on State
Resistance vs. Temperature
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Forward Transfer Admittance
vs. Drain Current
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Gate
to
Source
Voltage
V
GS
(V)
Switching Characteristics
Switching
Time
t
(ns)
Drain Current ID (A)
2.5
2.0
1.5
1.0
0.5
0
–40
0
40
80
120
Pulse Test
160
I = 5 A
V
= 10 V
GS
D
2 A
1 A
50
20
10
5
2
1
0.5
0.1
0.2
0.5
1
5
10
2
Tc = 25
°C
–25
°C
75
°C
Pulse Test
V
= 20 V
DS
0.1
0.2
0.5
1
2
5
10
50
100
200
500
1000
2000
5000
di/dt = 100 A/ s, V
= 0
Ta = 25
°C
GS
10000
1000
100
10
010
20
30
40
50
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
1000
800
600
400
200
40
80
120
160
200
20
16
12
8
4
0
V
= 250 V
400 V
600 V
DD
V
I = 8 A
DS
D
VGS
0
V
= 250 V
400 V
600 V
DD
0.2
0.5
1
2
5
10
20
5
10
20
50
100
200
500
t
tf
r
VGS = 10 V, VDD = 30 V
PW = 5
s, duty ≤ 1 %
td(off)
td(on)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1934(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1934-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1938 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1938-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK1938RF101 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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