參數(shù)資料
型號: 2SK1933-E
元件分類: JFETs
英文描述: 10 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SC-65, TO-3P, 3 PIN
文件頁數(shù): 5/7頁
文件大?。?/td> 82K
代理商: 2SK1933-E
2SK1933
Rev.3.00 Apr 27, 2006 page 5 of 6
Reverse Drain Current vs.
Source to Drain Voltage
Source to Drain Voltage VSD (V)
Reverse
Drain
Current
I
DR
(A)
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized
Transient
Thermal
Impedance
γ S
(t)
Switching Time Test Circuit
Waveforms
0
10
8
6
4
2
0.2
0.4
0.6
0.8
1.0
Pulse Test
0, –5 V
V
= 10 V
GS
3
1.0
0.1
0.3
10
0.03
0.01
100
10 m
100 m
1
10
1 m
PW
PDM
D =
T
PW
θch–c (t) = γ
S (t) θch–c
θch–c = 0.83°C/W, T
C = 25°C
T
TC = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot
Pulse
Vin Monitor
Vout Monitor
RL
VDD
30 V
D.U.T
50
Vin
10 V
=
.
Vout
td (on)
10%
90%
10%
90%
Vin
t r
td (off)
t f
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