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參數(shù)資料
| 型號： | 2SK313 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 450V五（巴西）直| 12A條（?。﹟至3 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 2SK313 |
2SK3134(L),2SK3134(S)
5
0
48
12
16
20
16
12
8
4
–50
0
50
100
150
200
0
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(m
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
V
= 10 V
GS
4 V
Pulse Test
R
(m
)
DS(on)
0.5
0.4
0.3
0.2
0.1
Pulse Test
I
= 50 A
D
20 A
10 A
1
30
100
3
100
0.3
1
0.1
10
1000
10
3
10, 20, 50 A
I
= 50 A
D
30
300
V
= 4 V
GS
10 V
Pulse Test
10, 20 A
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
0.1
0.3
1
3
10
30
100
500
100
200
20
50
10
2
5
1
0.5
Tc = –25 °C
75 °C
25 °C
V
= 10 V
Pulse Test
DS
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK315E | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK315F | TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | SPAK |
| 2SK315G | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK317 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK318 | TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 4A I(D) | SOT-119VAR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3130 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type |
| 2SK3130(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220 |
| 2SK3130_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type |
| 2SK3130_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator Applications |
| 2SK3131 | 功能描述:MOSFET N-CH 500V 50A TO-3P(L) RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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