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參數(shù)資料
| 型號(hào)： | 2SK3225-AZ |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 34000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 封裝： | MP-3, 3 PIN |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 403K |
| 代理商： | 2SK3225-AZ |
Data Sheet D13798EJ3V0DS
5
2SK3225
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
0
50
10
0
50
100
150
ID = 17 A
20
40
30
VGS = 4.0 V
VGS = 10 V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1.0
ISD
-
Diode
Forward
Current
-
A
0
1.5
VSD - Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
VGS = 0 V
VGS = 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
10
0.1
100
1000
10000
1
10
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
10
1
0.1
100
1000
10
100
tf
tr
td(on)
td(off)
VDD = 30 V
VGS = 10 V
RG = 10
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
IF - Drain Current - A
trr
-
Reverse
Recovery
Time
-
ns
di/dt = 100 A/
VGS = 0 V
s
1
0.1
10
1
10
100
1000
100
V
GS
-
Gate
to
Source
Voltage
-
V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
20
40
60
80
20
40
60
80
2
4
6
8
0
VDD = 48 V
30 V
12 V
12
14
16
10
ID = 34 A
VGS = 10 V
VGS
VDS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3225-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3225-Z(AZ) | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SK3228 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 80V 75A 3PIN TO-220AB - Rail/Tube |
| 2SK3228-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 80V 75A 3-Pin(3+Tab) TO-220AB |
| 2SK3229 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 80V 60A 3PIN TO-220CFM - Rail/Tube |
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