1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3296
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
Date Published
Printed in Japan
D14063EJ2V0DS00 (2nd edition)
May 2001 NS CP(K)
DATA SHEET
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3296 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5 V drive available
Low on-state resistance
R
DS(on)1
= 12 m
MAX. (V
GS
= 10 V, I
D
= 18 A)
Low gate charge
Q
G
= 30 nC TYP. (I
D
= 35 A, V
DD
= 16 V, V
GS
= 10 V)
Built-in gate protection diode
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C
)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
±
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
V
Drain Current (DC) (T
C
= 25°C)
I
D(DC)
±
35
A
Drain Current (Pulse)
Note
I
D(pulse)
±
140
A
Total Power Dissipation (T
A
= 25°C)
P
T1
1.5
W
Total Power Dissipation (T
C
= 25°C)
P
T2
40
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
55 to +150
°C
Note
PW
≤
10
μ
s, Duty Cycle
≤
1%
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3296
TO-220AB
2SK3296-S
TO-262
2SK3296-ZK
TO-263(MP-25ZK)
2SK3296-ZJ
TO-263(MP-25ZJ)
The mark
shows major revised points.