參數(shù)資料
型號(hào): 2SK3296
廠商: NEC Corp.
英文描述: MOS FIELD EFFECT TRANSISTOR
中文描述: MOS場效應(yīng)管
文件頁數(shù): 5/8頁
文件大?。?/td> 422K
代理商: 2SK3296
Data Sheet D14063EJ2V0DS
5
2SK3296
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature -
C
d
0
40
20
60
100
140
80
120
160
0
20
40
60
80
100
T
C
- Case Temperature -
C
P
T
-
00
80
20
40
60
100
140
120
160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
10
20
30
40
50
1
10
100
0.1
1000
100
10
1
T
C
= 25
°
C
Single Pulse
I
D(pulse)
I
D(DC)
V
DS
- Drain to Source Voltage - V
I
D
FORWARD BIAS SAFE OPERATING AREA
μ
100 s
μ
300 s
PW=10 s
μ
10ms
Powe DsspaionLmted
R
DSon
Lmted
(
GS
DC
PW - Pulse Width - sec
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
/
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
R
th(ch-C)
= 3.13
C
/W
μ
μ
R
th(ch-A)
= 83.3
C
/W
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