參數(shù)資料
型號: 2SK3306
元件分類: JFETs
英文描述: 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: MP-45F, ISOLATED TO-220, 3 PIN
文件頁數(shù): 3/7頁
文件大?。?/td> 69K
代理商: 2SK3306
Data Sheet D14004EJ2V0DS00
3
2SK3306
TYPICAL CHARACTERISTICS(TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
40
60
100
120
140
160
20
40
60
80
100
Tc - Case Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
020
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
40
60
80
100
120
140
160
Tc - Case Temperature - C
P
T
-
Total
Power
Dissipation
-
W
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0
4
8
12
16
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
10
8
6
2
FORWARD BIAS SAFE OPERATING AREA
100
10
0.1
10
100
1000
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
1
Power
Dissipation
Limited
10
ms
R
DS
(on)
Limited
(at
V
GS
=
10
V)
ID (DC)
ID (pulse)
100
s
Tc = 25 C
Single Pulse
PW
=
10
s
Pulsed
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
0
VGS - Gate to Source Voltage - V
Pulsed
1000
100
0.001
0.01
ID
-
Drain
Current
-
A
50
40
30
20
10
VGS = 20 V
0.1
1
10
510
15
80
100
ms
1ms
4
10 V
8.0 V
VGS = 6.0 V
TA = –25 C
25 C
75 C
125 C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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2SK3309(Q) 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube