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參數(shù)資料
| 型號： | 2SK3357 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關功率場效應晶體管 工業(yè)級 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 68K |
| 代理商： | 2SK3357 |
Data Sheet D14134EJ2V0DS00
2
2SK3357
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10
V, I
D
= 38
A
4.6
5.8
m
R
DS(on)2
V
GS
= 4.0
V, I
D
= 38
A
6.1
8.8
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 38
A
38
72
S
Drain Leakage Current
I
DSS
V
DS
= 60
V, V
GS
= 0
V
10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= ±20
V, V
DS
= 0
V
±
10
μ
A
Input Capacitance
C
iss
V
DS
= 10
V, V
GS
= 0
V, f = 1
MHz
9800
pF
Output Capacitance
C
oss
1500
pF
Reverse Transfer Capacitance
C
rss
630
pF
Turn-on Delay Time
t
d(on)
I
D
= 38
A, V
GS(on)
= 10
V, V
DD
= 30
V,
105
ns
Rise Time
t
r
R
G
= 10
1350
ns
Turn-off Delay Time
t
d(off)
500
ns
Fall Time
t
f
480
ns
Total Gate Charge
Q
G
I
D
= 75
A , V
DD
= 48
V, V
GS
= 10
V
170
nC
Gate to Source Charge
Q
GS
28
nC
Gate to Drain Charge
Q
GD
46
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 75
A, V
GS
= 0
V
0.96
V
Reverse Recovery Time
t
rr
I
F
= 75
A, V
GS
= 0
V,
64
ns
Reverse Recovery Charge
Q
rr
di/dt = 100
A/
μ
s
130
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1
s
Duty Cycle
≤
1 %
μ
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
V
GS
(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3358 | Switching N-channel power MOS FET industrial use |
| 2SK3358-S | Switching N-channel power MOS FET industrial use |
| 2SK3358-Z | Switching N-channel power MOS FET industrial use |
| 2SK3365 | Switching N-channel power MOS FET industrial use |
| 2SK3365-Z | Switching N-channel power MOS FET industrial use |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3357-A | 制造商:Renesas Electronics 功能描述:Nch 60V 75A 5.8m@10V TO3P Cut Tape 制造商:Renesas Electronics 功能描述:Nch 60V 75A 5.8m@10V TO3P Bulk 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,75A,4.6m ohm,TO-3P |
| 2SK3358 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3358-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3358-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3359 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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