參數(shù)資料
型號: 2SK3358-Z
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關功率場效應晶體管 工業(yè)級
文件頁數(shù): 1/4頁
文件大小: 48K
代理商: 2SK3358-Z
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1999
MOS FIELD EFFECT TRANSISTOR
2SK3358
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PRELIMINARY DATA SHEET
Document No.
Date Published
Printed in Japan
D14322EJ1V0DS00 (1st edition)
April 2000 NS CP(K)
DESCRIPTION
The 2SK3358 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low on-state resistance
R
DS(on)1
= 30 m
MAX. (V
GS
= 10
V, I
D
= 28
A)
R
DS(on)2
= 40 m
MAX. (V
GS
= 4.5
V, I
D
= 20
A)
Low C
iss
: C
iss
= 3200
pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
100
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS(AC)
±20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS(DC)
+20,
10
V
Drain Current (DC)
Drain Current (Pulse)
Note1
I
D(DC)
±55
A
I
D(pulse)
±165
A
Total Power Dissipation (T
C
= 25°C)
P
T
100
W
Total Power Dissipation (T
A
= 25°C)
P
T
1.5
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
–55 to +150
°C
I
AS
39
A
E
AS
152
mJ
Notes 1.
PW
10
μ
s, Duty cycle
1 %
2.
Starting T
ch
= 25 °C, R
G
= 25
,
V
GS
= 20 V
0 V
THERMAL RESISTANCE
Channel to Case
R
th(ch-C)
1.25
°C/W
Channel to Ambient
R
th(ch-A)
83.3
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3358
TO-220AB
2SK3358-S
TO-262
2SK3358-Z
TO-220SMD
#
#
The mark
#
shows major revised points.
#
(TO-220AB)
(TO-262)
(TO-220SMD)
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