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參數(shù)資料
| 型號(hào)： | 2SK3365-Z |
| 廠商： | NEC Corp. |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | 2SK3365-Z |
Data Sheet D14255EJ1V0DS00
6
2SK3365
PACKAGE DRAWINGS (Unit : mm)
1) TO-251 (MP-3)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2
1
3
6.5±0.2
5.0±0.2
4
1
0
+
5
7
1
2.3
2.3
0
0.5±0.1
2.3±0.2
1
1.1±0.2
0.5-
+0.2
0.5-
+0.2
2) TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1
2
3
4
6.5±0.2
5.0±0.2
4
0
2.3 2.3
0.9
MAX.
5
1
2
M
1
0
+
2.3±0.2
0.5±0.1
1
0.8
MAX.
0.8
1
0
1.1±0.2
EQUIVALENT CIRCUIT
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3366 | Switching N-channel power MOS FET industrial use |
| 2SK3366-Z | Switching N-channel power MOS FET industrial use |
| 2SK3367-Z | RECTIFIER STANDARD SINGLE 1A 100V 100 30A-ifsm 5uA-ir 1V-vf DO-41 5K/AMMO |
| 2SK3367 | Switching N-channel power MOS FET industrial use |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3365-Z(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3365-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 Cut Tape |
| 2SK3366 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK3366-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 20A 3-Pin(3+Tab) TO-251 |
| 2SK3366-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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