參數(shù)資料
型號(hào): 2SK3387
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV)
中文描述: 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山型(二級(jí)-π- MOSV)
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 216K
代理商: 2SK3387
2SK3387
2002-07-22
3
F
f
D
D
Drain-source voltage V
DS
(V)
I
D
– V
DS
D
D
Drain-source voltage V
DS
(V)
I
D
– V
DS
D
D
Gate-source voltage V
GS
(V)
I
D
– V
GS
D
D
Gate-source voltage V
GS
(V)
V
DS
– V
GS
Drain current I
D
(A)
Y
fs
– I
D
Drain current I
D
(A)
R
DS (ON)
– I
D
D
R
D
20
16
12
8
4
0
0
1
2
3
4
5
VGS 3 V
Common source
Tc 25°C
Pulse test
3.2
3.5
3.8
4
6
8
10
50
40
30
20
10
0
0
2
4
6
8
10
VGS 2.5 V
Common source
Tc 25°C
Pulse test
3
3.5
4
6
10
4.5
5
8
0
1
2
3
4
0
ID 18 A
2
4
6
8
10
12
Common source
Tc 25°C
Pulse test
3
9
1
1
3
5
10
30
50
3
5
10
30
50
100
Common source
VDS 10 V
Pulse test
25
100
Tc 55°C
0
0
1
2
3
4
5
10
20
30
Common source
VDS 10 V
Pulse test
Tc 55°C
25
100
10
0.1
0.3 0.5
1
3
5
10
30 50
30
50
100
300
500
1000
Common source
Tc 25°C
Pulse test
4
VGS 10 V
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