參數(shù)資料
型號(hào): 2SK3388
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
中文描述: 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山類型
文件頁數(shù): 5/6頁
文件大小: 225K
代理商: 2SK3388
2SK3388
2002-02-06
5
A
Pulse width t
w
(s)
r
th
– t
w
N
r
t
/
t
Drain-source voltage V
DS
(V)
Safe operating area
D
Channel temperature (initial) T
ch
(°C)
E
AS
– T
ch
R
G
25
V
DD
50 V, L 2.06 mH
VDD
BVDSS
BVDSS
2
I
L
2
1
Ε
AS
Waveform
I
AR
B
VDSS
V
DD
V
DS
Test circuit
15
V
15
V
1
0.1
0.00001
0.0001
10
0.001
0.01
0.1
1
10
Single pulse
0.2
0.1
0.05
0.02
0.01
T
PDM
t
Duty t/T
Rth (ch-c) 1.0°C/W
Duty 0.5
0.01
0.1
1
10
100
1000
1
10
100
DC operation
Tc 25°C
100 s
*
1 ms
*
ID max (pulsed)
*
*
Single nonrepetitive pulse
Tc 25°C
Curves must be derated
linearly with increase in
temperature.
ID max
(continuous)
VDSS max
500
400
300
200
100
0
25
50
75
100
125
150
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