- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369205 > 2SK3481-S (NEC Corp.) SWITCHING N-CHANNEL POWER MOS FET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK3481-S |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | 開關(guān)N溝道功率場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 76K |
| 代理商： | 2SK3481-S |
Data Sheet D15063EJ1V0DS
2
2SK3481
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 100
V, V
GS
= 0
V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±20
V, V
DS
= 0
V
±
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 15
A
9
18
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10
V, I
D
= 15
A
40
50
m
R
DS(on)2
V
GS
= 4.5
V, I
D
= 15
A
44
58
m
Input Capacitance
C
iss
V
DS
= 10
V
2300
pF
Output Capacitance
C
oss
V
GS
= 0
V
230
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
120
pF
Turn-on Delay Time
t
d(on)
V
DD
= 50
V, I
D
= 15
A
13
ns
Rise Time
t
r
V
GS
= 10
V
10
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
53
ns
Fall Time
t
f
5.0
ns
Total Gate Charge
Q
G
V
DD
= 80
V
48
nC
Gate to Source Charge
Q
GS
V
GS
= 10
V
7.0
nC
Gate to Drain Charge
Q
GD
I
D
= 30
A
12
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 30
A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 30
A, V
GS
= 0
V
70
ns
Reverse Recovery Charge
Q
rr
di/dt = 100
A/
μ
s
160
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1
s
Duty Cycle
≤
1%
μ
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3481-Z | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3481-ZJ | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3491 | Ultrahigh-Speed Switching Applications |
| 2SK3502-01MR | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK3504-01 | MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3481-S12-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3481-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3481-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-220 SMD |
| 2SK3481-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3481-ZJ-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。