參數(shù)資料
型號: 2SK3481-S
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOS FET
中文描述: 開關(guān)N溝道功率場效應晶體管
文件頁數(shù): 4/8頁
文件大?。?/td> 76K
代理商: 2SK3481-S
Data Sheet D15063EJ1V0DS
4
2SK3481
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
Pulsed
1
2
3
4
5
1
0.1
0.01
10
100
T
A
=
40
C
T
A
=
C
25
C
75
C
150
C
C
C
C
V
DS
= 10 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
2
3
4
1
0
0
20
60
40
80
5
6
V
GS
= 10 V
4.5 V
Pulsed
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
f
0.01
0.1
1
10
100
10
100
0.1
0.01
1
Pulsed
V
DS
= 10 V
T
= 150
C
75
C
25
C
40
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
V
GS
- Gate to Source Voltage - V
R
D
5
0
10
15
20
Pulsed
60
40
20
0
15 A
I
D
= 30 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
1
0.1
80
60
40
20
0
10
100
Pulsed
V
GS
= 4.5 V
10 V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
C
V
G
V
DS
= 10 V
I
D
= 1 mA
1
2
3
4
50
0
50
100
150
0
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