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參數(shù)資料
| 型號(hào)： | 2SK3481-S |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | 開關(guān)N溝道功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 76K |
| 代理商： | 2SK3481-S |
Data Sheet D15063EJ1V0DS
7
2SK3481
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
φ
4
3
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
5
6
1
1
1.3±0.2
0.5±0.2
2.8±0.2
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP.
2.54 TYP.
8
1
1.3±0.2
0.5±0.2
2.8±0.2
1
4
3) TO-263 (MP-25ZJ)
1.4±0.2
1
2.54 TYP.
2.54 TYP.
8
1
2
3
5
4
4.8 MAX.
1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
05RTYP
08RTYP
2
4) TO-220SMD (MP-25Z)
Note
10 TYP.
1.4±0.2
1
2.54 TYP.
2.54 TYP.
8
1
2
3
3
1
4
4.8 MAX.
1.3±0.2
0.5±0.2
05RTYP
08RTYP
0.75±0.3
2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note
This package is produced only in Japan
.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
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| 2SK3481-Z | SWITCHING N-CHANNEL POWER MOS FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3481-S12-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3481-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3481-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-220 SMD |
| 2SK3481-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3481-ZJ-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
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