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參數(shù)資料
| 型號(hào)： | 2SK3507-ZK |
| 廠(chǎng)商： | NEC Corp. |
| 英文描述： | PROFET™: Smart High Side Switches; Package: PG-TO252-5; Channels: 1.0; R<sub>ON</sub> @ Tj = 25°C : 12.0 mOhm; Recommended Operating Voltage Range: 5.5 - 20.0 V; IL(SC): 65.0 A; Diagnostic: Sense |
| 中文描述： | 開(kāi)關(guān)N溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 7/8頁(yè) |
| 文件大?。?/td> | 143K |
| 代理商： | 2SK3507-ZK |
Data Sheet D15387EJ1V0DS
7
2SK3507
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
6.5
±
0.2
5.1
±
0.3
4.3 MIN.
2.3
±
0.1
0.5
±
0.1
0.77
±
0.1
0.03 to 0.25
0.5
±
0.1
1.0
No Plating
No Plating
1
±
0
6
±
0
0
4
.
0
1
1
4
2
3
1.14 MAX.
2.3
2.3
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
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