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參數(shù)資料
| 型號(hào)： | 2SK3669 |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7J1B, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 193K |
| 代理商： | 2SK3669 |
2SK3669
2009-12-21
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±100
nA
Drain cutoff current
IDSS
VDS = 100 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
3.0
5.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 5 A
95
125
m
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 5 A
3
6
S
Input capacitance
Ciss
480
Reverse transfer capacitance
Crss
9
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
220
pF
Rise time
tr
2
Turn-on time
ton
12
Fall time
tf
2
Switching time
Turn-off time
toff
Duty ≤ 1%, tw = 10 μs
12
ns
Total gate charge
(gate-source plus gate-drain)
Qg
8.0
Gate-source charge
Qgs
5.6
Gate-drain (“Miller”) charge
Qgd
VDD ≈ 80 V, VGS = 10 V,
ID = 10 A
2.4
nC
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
10
A
Pulse drain reverse current
(tw ≤ 10 ms) (Note 1)
IDRP
15
A
Pulse drain reverse current
(tw ≤ 1 ms) (Note 1)
IDRP
28
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
65
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V,
dIDR/dt = 50 A/μs
90
nC
Marking
K3669
Lot No.
Note 4
Part No.
Note 4: A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
0 V
10 V
VGS
R
L
=5
Ω
VDD ≈ 50 V
ID = 10 A
VOUT
4.7
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