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參數(shù)資料
| 型號(hào)： | 2SK3669 |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7J1B, 3 PIN |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 193K |
| 代理商： | 2SK3669 |
2SK3669
2009-12-21
4
Drain
po
wer
di
ssip
ation
P
D
(W)
Gate
th
resh
old
vol
tage
V
th
(V)
Case temperature Tc (°C)
RDS (ON) – Tc
Drain-
sou
rce
O
N
-re
sis
tan
ce
R
DS
(ON)
(
m
Ω
)
Drain-source voltage VDS (V)
IDR – VDS
Drain
re
ver
se
cur
re
nt
I DR
(A)
Drain-source voltage VDS (V)
Capacitance – VDS
C
ap
aci
ta
nc
e
C
(p
F
)
Case temperature Tc (°C)
Vth – Tc
Case temperature Tc (°C)
PD – Tc
Gate-
sour
ce
volt
ag
e
V
GS
(V)
Total gate charge Qg (nC)
Dynamic input/output characteristics
Drain-
sou
rce
volt
ag
e
V
DS
(V)
10
0
80
160
80
40
2
6
0
120
4
8
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
40
80
120
160
0
5
15
20
25
10
25
5
15
20
VDS
0
5
10
15
20
0
20
60
80
100
40
0
VGS
Common source
ID = 10 A
VDD = 80 V
Tc
= 25°C
Pulse test
3
0.1
10
100
1000
3000
300
500
30
50
Coss
Ciss
Crss
Common source
Tc
= 25°C
f
= 1 MHz
VGS = 0 V
10
5
300
30
1
3
0.3
0.1
02.5
1.5
0.5
10
100
1
2
1
VGS = 0, 1 V
1
3
10
Common source
Tc
= 25°C
Pulse test
150
0
80
40
0
40
120
160
80
50
100
200
250
Common source
VGS = 10 V
Pulse test
ID = 10 A
5 A
2.5
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| 2SK3686-01 | 16 A, 600 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3669(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 100V 10A PW-MOLD 制造商:Toshiba America Electronic Components 功能描述:Semi, Discrete, MOS, FET, TOSH, Pw-Mold, |
| 2SK366-BL(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 12mA Si 3-Pin |
| 2SK366-GR(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 6.5mA Si 3-Pin |
| 2SK3670(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 150V 0.67A 3-Pin TO-92 Mod Bulk |
| 2SK3670(F,M) | 功能描述:MOSFET N-CH 制造商:toshiba semiconductor and storage 系列:* 包裝:散裝 零件狀態(tài):停產(chǎn) 安裝類型:通孔 供應(yīng)商器件封裝:TO-92MOD 封裝/外殼:TO-226-3，TO-92-3 長(zhǎng)體 標(biāo)準(zhǔn)包裝:1 |
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