參數(shù)資料
型號(hào): 2SK3787-01MR
廠商: FUJI ELECTRIC CO LTD
元件分類: JFETs
英文描述: 4.2 A, 800 V, 3.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 3/4頁
文件大小: 117K
代理商: 2SK3787-01MR
3
2SK3787-01MR
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
VG
S(
th
)[V
]
Tch [
°C]
02468
10
12
14
16
18
20
22
24
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=4.2A,Tch=25
°C
VG
S
[
V
]
640V
400V
Vcc= 160V
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
C
[p
F
]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.0
0.5
1.0
1.5
0.1
1
10
IF
[A
]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
s pulse test,Tch=25°C
10
-1
10
0
10
1
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t[n
s
]
ID [A]
0
255075
100
125
150
0
50
100
150
200
250
300
350
400
450
I
AS
=1.7A
I
AS
=2.6A
I
AS
=4.2A
E
A
V
[m
J
]
starting Tch [
°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=80V,I(AV)<=4.2A
相關(guān)PDF資料
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2SK3797 13 A, 600 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET
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