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參數(shù)資料
| 型號(hào)： | 2SK3812-ZP |
| 元件分類： | JFETs |
| 英文描述： | 110 A, 60 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263, MP-25ZP, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 270K |
| 代理商： | 2SK3812-ZP |
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3812-ZP | 110 A, 60 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3814 | 60 A, 60 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 2SK3817 | 60 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3818 | 74 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3823 | 40 A, 60 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3812-ZP-A E2 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3812-ZP-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3812-ZP-E1-AY | 功能描述:MOSFET N-CH 60V MP-25ZP/TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3812-ZP-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3813-AZ | 功能描述:MOSFET N-CH 40V MP-3/TO-251 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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