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參數(shù)資料
| 型號： | 2SK4014 |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 232K |
| 代理商： | 2SK4014 |
2SK4014
2010-01-29
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
—
±10
μA
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 720 V, VGS = 0 V
—
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 3 A
—
1.6
2.0
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 3 A
2.5
5.0
—
S
Input capacitance
Ciss
—
1400
—
Reverse transfer capacitance
Crss
—
30
—
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
—
130
—
pF
Rise time
tr
—
25
—
Turnon time
ton
—
75
—
Fall time
tf
—
60
—
Switching time
Turnoff time
toff
—
220
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
45
—
Gatesource charge
Qgs
—
25
—
Gatedrain (“Miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 6 A
—
20
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
6
A
Pulse drain reverse current
(Note 1)
IDRP
—
18
A
Forward voltage (diode)
VDSF
IDR = 6 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
1100
—
ns
Reverse recovery charge
Qrr
IDR = 6 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
10
—
μC
Marking
ID = 3 A
RL = 133
VDD ≈ 400 V
50 Ω
Lot No.
Note 4
K4014
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK4014(Q) | 制造商:Toshiba 功能描述:Nch 900V 6A 2.0@10V TO220SIS 制造商:Toshiba 功能描述:Nch 900V 6A 2.0@10V TO220SIS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N CH 6A 900V TO220IS 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-Channel 900V 6A TO220SIS 制造商:Toshiba America Electronic Components 功能描述:Transistor,MOSFET |
| 2SK4014(Q,M) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 6A TO220SIS |
| 2SK4014_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DC/DC Converter, Relay Drive and Motor Drive Applications |
| 2SK4014_10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DC-DC Converter, Relay Drive and Motor Drive |
| 2SK4015 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator Applications |
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