參數(shù)資料
型號(hào): 4N33
廠商: Toshiba Corporation
英文描述: PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)
中文描述: 光敏三極管(交流線/數(shù)字邏輯隔離器)
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 128K
代理商: 4N33
www.vishay.com
2
Document Number 83736
Rev. 1.4, 26-Jan-05
4N32/ 4N33
Vishay Semiconductors
Output
Coupler
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter breakdown voltage
BVCEO
30
V
Emitter-base breakdown voltage
BVEBO
8.0
V
Collector-base breakdown voltage
BVCBO
50
V
Emitter-collector breakdown voltage
BVECO
5.0
V
Collector (load) current
IC
125
mA
Power dissipation
Pdiss
150
mW
Derate linearly
2.0
mW/°C
Parameter
Test condition
Symbol
Value
Unit
Total dissipation
Ptot
250
mW
Derate linearly
3.3
mW/°
Isolation test voltage (between
emitter and detector, Standard
Climate: 23 °C/ 50 %RH, \\nDIN
500 14)
VISO
5300
VRMS
Leakage Path
7.0
mm min.
Air Path
7.0
mm min.
Isolation Resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Storange temperature
Tamb
- 55 to + 150
°C
Operating temperature
Tstg
- 55 to + 100
°C
Lead soldering time
at 260 °C
10
s
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 50 mA
VF
1.25
1.5
V
Reverse current
VR = 3.0 V
IR
0.1
100
Capacitance
VR = 0 V
CO
25
pF
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