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參數(shù)資料
| 型號(hào)： | 4N35-X009 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 電容 |
| 英文描述： | Tantalum Chip Capacitor |
| 中文描述： | 鉭芯片電容器 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 157K |
| 代理商： | 4N35-X009 |
4N35/ 4N36/ 4N37/ 4N38
Document Number 83717
Rev. 1.5, 27-Jan-05
Vishay Semiconductors
www.vishay.com
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i179004
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NC
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Pb-free
e3
Optocoupler, Phototransistor Output, With Base Connection
Features
Isolation Test Voltage 5300 VRMS
Interfaces with common logic families
Input-output coupling capacitance < 0.5 pF
Industry Standard Dual-in line 6-pin package
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
Underwriters Laboratory File #E52744
DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Applications
AC mains detection
Reed relay driving
Switch mode power supply feedback
Telephone ring detection
Logic ground isolation
Logic coupling with high frequency noise rejection
Description
This data sheet presents five families of Vishay Indus-
try Standard Single Channel Phototransistor Cou-
plers.These families include the 4N35/ 4N36/ 4N37/
4N38 couplers.
Each optocoupler consists of gallium arsenide infra-
red LED and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL)
listed to comply with a 5300 VRMS isolation test volt-
age.
This isolation performance is accomplished through
Vishay double molding isolation manufacturing pro-
cess. Comliance to DIN EN 60747-5-2(VDE0884)/
DIN EN 60747-5-5 pending partial discharge isolation
specification is available for these families by ordering
option 1.
These isolation processes and the Vishay ISO9001
quality program results in the highest isolation perfor-
mance available for a commecial plastic phototransis-
tor optocoupler.
The devices are available in lead formed configura-
tion suitable for surface mounting and are available
either on tape and reel, or in standard tube shipping
containers.
Note:
Designing with data sheet is cover in Application Note 45
Order Information
For additional information on the available options refer to
Option Information.
Part
Remarks
4N35
CTR > 100 %, DIP-6
4N36
CTR > 100 %, DIP-6
4N37
CTR > 100 %, DIP-6
4N38
CTR > 20 %, DIP-6
4N35-X006
CTR > 100 %, DIP-6 400 mil (option 6)
4N35-X007
CTR > 100 %, SMD-6 (option 7)
4N35-X009
CTR > 100 %, SMD-6 (option 9)
4N36-X007
CTR > 100 %, SMD-6 (option 7)
4N36-X009
CTR > 100 %, SMD-6 (option 9)
4N37-X006
CTR > 100 %, DIP-6 400 mil (option 6)
4N37-X009
CTR > 100 %, SMD-6 (option 9)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 4N35DCJ | COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS |
| 4N35GV | Optocoupler with Phototransistor Output |
| 4N35GVSERIES | Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
| 4N35MTA-V | 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| 4N35MTB-V | 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 4N35-X009T | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR >100% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| 4N35-X016 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>100% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| 4N35-X017 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>100% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| 4N35-X017T | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>100% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| 4N35-X019T | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>100% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
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