參數(shù)資料
型號(hào): 62LV256SC
廠商: BRILLIANCE SEMICONDUCTOR, INC.
元件分類: SRAM
英文描述: Very Low Power/Voltage CMOS SRAM 128K X 8 bit
中文描述: 非常低功率/電壓CMOS SRAM的128K的× 8位
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 40K
代理商: 62LV256SC
IS62LV256
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. K
12/11/02
3
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
CC
3.3V ± 5%
3.3V ± 5%
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –1.0 mA
2.4
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 2.1 mA
0.4
V
V
IH
Input HIGH Voltage
2.2
V
CC
+ 0.3
V
V
IL
Input LOW Voltage
(1)
–0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
CC
Com.
Ind.
–2
–5
2
5
μA
I
LO
Output Leakage
GND
V
OUT
V
CC
, Outputs Disabled
Com.
Ind.
–2
–5
2
5
μA
Notes:
1. V
IL
= –3.0V for pulse width less than 10 ns.
2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
I
OUT
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +4.6
–55 to +125
–65 to +150
0.5
20
Unit
V
°C
°C
W
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
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