參數(shù)資料
型號： 62LV256SC
廠商： BRILLIANCE SEMICONDUCTOR, INC.
元件分類： SRAM
英文描述： Very Low Power/Voltage CMOS SRAM 128K X 8 bit
中文描述： 非常低功率/電壓CMOS SRAM的128K的× 8位
文件頁數(shù)： 4/9頁
文件大?。?/td> 40K
代理商： 62LV256SC
IS62LV256
ISSI
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. K
12/11/02
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
5
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc =3.3V.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-45 ns
-70 ns
Min.
Symbol
Parameter
Test Conditions
Min.
Max.
Max.
Unit
I
CC
1
Vcc Operating
Supply Current
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = 0
Com.
Ind.
—
—
20
30
—
—
20
30
mA
I
CC
2
Vcc Dynamic Operating
Supply Current
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
—
—
35
45
—
—
30
40
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
V
CC
= Max.,
CE
≥
V
CC
– 0.2V,
V
IN
≥
V
CC
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
—
—
2
5
—
—
2
5
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
Com.
Ind.
—
—
90
200
—
—
90
200
μA
Notes:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
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