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參數(shù)資料
| 型號(hào)： | 62WV5128ALL |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| 中文描述： | 為512k × 8低電壓，超低功耗的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 83K |
| 代理商： | 62WV5128ALL |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
04/30/03
3
IS62WV5128ALL, IS62WV5128BLL
ISSI
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
V
DD
Min.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
= -0.1 mA
I
OH
= -1 mA
1.65-2.2V
2.5-3.6V
1.4
2.2
—
—
V
V
V
OL
Output LOW Voltage
I
OL
= 0.1 mA
I
OL
= 2.1 mA
1.65-2.2V
2.5-3.6V
—
—
0.2
0.4
V
V
V
IH
Input HIGH Voltage
1.65-2.2V
2.5-3.6V
1.4
2.2
V
DD
+ 0.2
V
DD
+ 0.3
V
V
V
IL(1)
Input LOW Voltage
1.65-2.2V
2.5-3.6V
–0.2
–0.2
0.4
0.6
V
V
I
LI
Input Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
–1
1
μA
I
LO
Output Leakage
–1
1
μA
Notes:
1. V
IL
(min.) = –1.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
V
DD
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
V
DD
Related to GND
Storage Temperature
Power Dissipation
Value
Unit
V
V
°C
W
–0.2 to V
DD
+0.3
–0.2 to V
DD
+0.3
–65 to +150
1.0
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
OPERATING RANGE (V
DD
)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
IS62WV5128ALL
1.65V - 2.2V
1.65V - 2.2V
IS62WV5128BLL
2.5V - 3.6V
2.5V - 3.6V
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