參數(shù)資料
型號(hào): 6MBI50L-120
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: THERMISTOR GLASS 2K OHM DO-35
中文描述: 50 A, 1200 V, N-CHANNEL IGBT
封裝: M616, 19 PIN
文件頁(yè)數(shù): 2/5頁(yè)
文件大小: 119K
代理商: 6MBI50L-120
IGBT Module
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
6MBI50UA-120
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Tj=25°C / chip
VGE=0V, f= 1MHz, Tj= 25°C
Vcc=600V, Ic=50A, Tj= 25°C
0
25
50
75
100
125
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
VGE=20V
15V
12V
10V
8V
0
25
50
75
100
125
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
VGE=20V
15V
12V
10V
8V
0
25
50
75
100
125
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5
10
15
20
25
C
Gate - Emitter voltage : VGE [ V ]
Ic=100A
Ic=50A
Ic= 25A
0.1
1.0
10.0
100.0
0
10
20
30
C
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
100
200
300
C
G
Gate charge : Qg [ nC ]
0
VGE
VCE
相關(guān)PDF資料
PDF描述
6MBI50F-120 IGBT(1200V 50A)
6MBI50S-140 IGBT Module
6MBI50S-120 IGBT(1200V/50A)
6MBI75U4B-120 13IGBT MODULE
6MBI75UB-120 IGBT Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
6MBI50S-060 制造商:未知廠家 制造商全稱:未知廠家 功能描述:6 PACK IGBT
6MBI50S-120 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT(1200V/50A)
6MBI50S-120-50 制造商:Fuji Electric 功能描述:6-PACK IGBT MODULE 50A 1200V NPT 制造商:Fuji Electric 功能描述:6-PACK IGBT, MODULE, 50A, 1200V NPT 制造商:Fuji Electric 功能描述:6-PACK IGBT, MODULE, 50A, 1200V NPT; Transistor Type:IGBT Module; DC Collector Current:75A; Collector Emitter Voltage Vces:2.65V; Power Dissipation Pd:360W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:17 ;RoHS Compliant: Yes
6MBI50S-120L 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT(1200V/6x50A)
6MBI50S-140 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE