參數(shù)資料
型號(hào): 6MBI50L-120
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: THERMISTOR GLASS 2K OHM DO-35
中文描述: 50 A, 1200 V, N-CHANNEL IGBT
封裝: M616, 19 PIN
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 119K
代理商: 6MBI50L-120
IGBT Module
6MBI50UA-120
Switching loss vs. Gate resistance (typ.)
+VGE=15V,-VGE <= 15V, RG >= 22
,Tj <= 125°C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=22
, Tj= 25°C
Vcc=600V, Ic=50A, VGE=±15V, Tj= 25°C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=22
, Tj=125°C
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=22
Vcc=600V, Ic=50A, VGE=±15V, Tj= 125°C
Reverse bias safe operating area (max.)
10
100
1000
10000
0
25
50
75
100
S
ton
toff
tr
tf
10
100
1000
10000
0
25
50
75
100
S
toff
ton
tr
tf
10
100
1000
10000
10
100
1000
S
tr
tf
toff
ton
0
2
4
6
8
10
0
25
50
75
100
S
Eon(125°C)
Eon(25°C)
Eoff(125°C)
Err(125°C)
Err(25°C)
Eoff(25°C)
0
10
20
30
40
50
10
100
1000
S
Eoff
Err
Eon
0
25
50
75
100
125
0
400
800
1200
C
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