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參數(shù)資料
| 型號(hào)： | 6MBI75S-120 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | IGBT(1200V/75A) |
| 中文描述： | 75 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-21 |
| 文件頁(yè)數(shù)： | 4/13頁(yè) |
| 文件大?。?/td> | 448K |
| 代理商： | 6MBI75S-120 |
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H04-004-03
13
MS5F 5497
4
3.Absolute Maximum Ratings ( at Tc= 25
℃
unless otherwise specified
）
Tc=25
℃
Tc=80
℃
Tc=25
℃
Tc=80
℃
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two termistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : 2.5~3.5 Nm (M5)
4. Electrical characteristics ( at Tj= 25
℃
unless otherwise specified)
(*)
Biggest internal terminal resistance among arm.
3.4
5000
495
-
-
m
Ω
Lead resistance, terminal-chip *
R lead
-
-
I
IGES
Zero gate voltage
Collector current
ICES
ton
tr
tr (i)
toff
tf
Collector-Emitter
saturation voltage
VGE=15V
Ic = 75A
VGE = 0V
VCE = 1200V
Rg = 9.1
VGE(th)
520
3450
Turn-on time
Turn-off time
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
VGE=0V
VCE(sat)
(
terminal)
-
-
-
-
2.00
1.60
1.70
μs
IF = 75A
-
0.35
T =100
℃
T = 25/50
℃
465
3305
-
1.90
-
Tj=125
℃
Tj= 25
℃
Tj=125
℃
Reverse recovery time
ｔｒｒ
VF
(chip)
IF = 75A
μs
Forward on voltage
VF
(terminal)
Tj= 25
℃
-
1.90
2.20
V
1.00
0.30
1.20
0.60
-
-
-
-
-
-
0.36
0.21
0.03
0.37
0.07
Vcc = 600V
Ic = 75A
VGE=±15V
1200
±20
Ic
Icp
100
75
200
150
75
150
390
V
V
Items
Symbols
Conditions
VCES
VGES
Collector-Emitter voltage
Gate-Emitter voltage
AC : 1min.
Continuous
1ms
1 device
2500
VAC
N
m
-Ic pulse
Pc
Tj
Tstg
A
℃
W
150
Collector current
Junction temperature
Storage temperature
Collector Power Dissipation
-Ic
1ms
Units
max.
typ.
Screw
Torque
-
min.
Characteristics
Mounting *3
3.5
Conditions
between terminal and copper base *1
between thermistor and others *2
Isolation
voltage
Viso
-40
～
+125
Ic = 75mA
200
VCE = 20V
Items
Symbols
VGE=±20V
VCE = 0V
-
-
-
nA
1.0
mA
V
-
8.5
V
4.5
6.5
Units
-
-
1.75
2.00
8
2.10
-
-
Maximum
Ratings
-
-
2.05
2.30
2.40
Input capacitance
Cies
VCE=10V,VGE=0V,f=1MHz
-
nF
K
T
Resistance
R
T = 25
℃
B
3375
B value
VCE(sat)
(chip)
Tj= 25
℃
Tj=125
℃
Tj= 25
℃
Tj=125
℃
-
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