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參數(shù)資料
| 型號： | 71V016SA |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | Power Resistor; Series:MP800; Resistance:1kohm; Resistance Tolerance:+/- 1 %; Power Rating:20W; Temperature Coefficient:-20 to +50 ppm/ C; Terminal Type:Radial Leaded; Package/Case:2-TO-220; Voltage Rating:300V |
| 中文描述： | 3.3V的CMOS靜態(tài)RAM 1梅格（64K的x 16位） |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 100K |
| 代理商： | 71V016SA |
6.42
5
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit) Commercial and Industrial Temperature Ranges
71V016SA10
(2)
71V016SA12
71V016SA15
71V016SA20
Symbol
Parameter
Mn.
Max.
Mn.
Max.
Mn.
Max.
Mn.
Max.
Unit
READ CYCLE
t
RC
Read Cycle Time
10
____
12
____
15
____
20
____
ns
t
AA
Address Access Time
____
10
____
12
____
15
____
20
ns
t
ACS
Chip Select Access Time
____
10
____
12
____
15
____
20
ns
t
CLZ
(1)
Chip Select Lowto Output in Low-Z
4
____
4
____
5
____
5
____
ns
t
CHZ
(1)
Chip Select High to Output in High-Z
____
5
____
6
____
6
____
8
ns
t
OE
Output Enable Low to Output Valid
____
5
____
6
____
7
____
8
ns
t
OLZ
(1)
Output Enable Lowto Output in Low-Z
0
____
0
____
0
____
0
____
ns
t
OHZ
(1)
Output Enable High to Output in High-Z
____
5
____
6
____
6
____
8
ns
t
OH
Output Hold fromAddress Change
4
—
4
—
4
—
4
—
ns
t
BE
Byte Enable Low to Output Valid
—
5
—
6
—
7
____
8
ns
t
BLZ
(1)
Byte Enable Lowto Output in Low-Z
0
____
0
____
0
____
0
____
ns
t
BHZ
(1)
Byte Enable High to Output in High-Z
____
5
____
6
____
6
____
8
ns
WRITE CYCLE
t
WC
Write Cycle Time
10
____
12
____
15
____
20
____
ns
t
AW
Address Valid to End of Write
7
____
8
____
10
____
12
____
ns
t
CW
Chip Select Low to End of Write
7
____
8
____
10
____
12
____
ns
t
BW
Byte Enable Low to End of Write
7
____
8
____
10
____
12
____
ns
t
AS
Address Set-up Time
0
____
0
____
0
____
0
____
ns
t
WR
Address Hold fromEnd of Write
0
____
0
____
0
____
0
____
ns
t
WP
Write Pulse Width
7
____
8
____
10
____
12
____
ns
t
DW
Data Valid to End of Write
5
____
6
____
7
____
9
____
ns
t
DH
Data Hold Time
0
____
0
____
0
____
0
____
ns
t
OW
(1)
Write Enable High to Output in Low-Z
3
____
3
____
3
____
3
____
ns
t
WHZ
(1)
Write Enable Lowto Output in High-Z
____
5
____
6
____
6
____
8
ns
3834 tbl 10
Timing Waveform of Read Cycle No. 1
(1,2,3)
NOTES:
1.
WE
is HIGH for Read Cycle.
2. Device is continuously selected,
CS
is LOW.
3.
OE
,
BHE
, and
BLE
are LOW.
AC Electrical Characteristics
(V
DD
= Mn. to Max., Commercial and Industrial Temperature Ranges)
DATA
OUT
ADDRESS
3834 drw 06
t
RC
t
AA
t
OH
t
OH
DATA
OUT
VALID
PREVIOUS DATA
OUT
VALID
NOTES:
1. This parameter is guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.
2. 0
°
C to +70
°
C temperature range only.
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| 71V016SA10BF | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V016SA10BF8 | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V016SA10BFG | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V016SA10BFG8 | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V016SA10BFGI | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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