- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄222827 > 71V25781YSA166BGI (INTEGRATED DEVICE TECHNOLOGY INC) 256K X 18 CACHE SRAM, 3.5 ns, PBGA119 PDF資料下載
參數(shù)資料
| 型號： | 71V25781YSA166BGI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 256K X 18 CACHE SRAM, 3.5 ns, PBGA119 |
| 封裝： | BGA-119 |
| 文件頁數(shù)： | 6/22頁 |
| 文件大?。?/td> | 627K |
| 代理商： | 71V25781YSA166BGI |
6.42
14
IDT71V25761, IDT71V25781, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
NOTES:
1.
Device
is
selected
through
entire
cycle;
CE
and
CS
1are
LOW,
CS
0is
HIGH.
2.
ZZ
input
is
LOW
and
LBO
is
Don't
Care
for
this
cycle.
3.
O1
(Ax)
represents
the
first
output
from
the
external
address
Ax.
I1
(Ay)
represents
the
first
input
from
the
external
addre
ss
Ay;
O1
(Az)
represents
the
first
output
from
the
external
address
Az;
O2
(Az)
represents
the
next
output
data
in
the
burst
sequence
of
the
base
address
Az,
etc.
where
A0
and
A1
are
advancing
for
the
four
word
burst
in
the
sequence
defined
by
the
state
of
the
LBO
input.
Timing Waveform of Combined Pipelined Read and Write Cycles(1,2,3)
C
L
K
A
D
S
P
A
D
R
E
S
G
W
A
D
V
O
E
D
A
T
A
O
U
T
tC
Y
C
tC
H
tC
L
tH
A
tS
W
tH
W
tC
L
Z
A
x
A
y
A
z
tH
S
I1
(A
y
)
tS
D
tH
D
tO
L
Z
tC
D
tC
D
C
D
A
TA
IN
(2
)
tO
E
O
1
(A
z
)
O
1
(A
z
)
S
in
g
le
R
e
a
d
P
ip
e
lin
e
d
B
u
rs
t
R
e
a
d
P
ip
e
lin
e
d
W
ri
te
O
1
(A
x
)
tO
H
Z
tS
S
tS
A
O
3
(A
z
)
O
2
(A
z
)
5
2
9
7
d
rw
0
9
tC
D
,
相關PDF資料 |
PDF描述 |
|---|---|
| 71V35761YSA183BGI8 | 128K X 36 CACHE SRAM, 3.3 ns, PBGA119 |
| 71V35781S183PF | 256K X 18 CACHE SRAM, 3.3 ns, PQFP100 |
| 7201LA20JGI | 512 X 9 OTHER FIFO, 20 ns, PQCC32 |
| 72031-111LF | 36 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, PRESS FIT |
| 72031-111 | 36 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, PRESS FIT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 71V30L25TF | 功能描述:靜態(tài)隨機存取存儲器 1Kx8 ASYNCHRONOUS 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V30L25TF8 | 功能描述:靜態(tài)隨機存取存儲器 1Kx8 ASYNCHRONOUS 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V30L25TFG | 功能描述:靜態(tài)隨機存取存儲器 1Kx8 ASYNCHRONOUS 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V30L25TFG8 | 功能描述:靜態(tài)隨機存取存儲器 1Kx8 ASYNCHRONOUS 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V30L25TFGI | 制造商:Integrated Device Technology Inc 功能描述:1KX8 LOW POWER 8K 3.3V DUAL PORT RAM - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。