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參數(shù)資料
| 型號： | 74LV74PW,118 |
| 廠商： | NXP Semiconductors |
| 文件頁數(shù)： | 19/19頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC DUAL D FF POSEDG TRIG 14TSSOP |
| 產(chǎn)品培訓(xùn)模塊： | Logic Packages |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 系列： | 74LV |
| 功能： | 設(shè)置（預(yù)設(shè)）和復(fù)位 |
| 類型： | D 型 |
| 輸出類型： | 差分 |
| 元件數(shù)： | 2 |
| 每個元件的位元數(shù)： | 1 |
| 頻率 - 時鐘： | 56MHz |
| 觸發(fā)器類型： | 正邊沿 |
| 輸出電流高，低： | 12mA，12mA |
| 電源電壓： | 1 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 14-TSSOP（0.173"，4.40mm 寬） |
| 包裝： | 帶卷 (TR) |
74LV74
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 9 September 2013
9 of 19
NXP Semiconductors
74LV74
Dual D-type flip-flop with set and reset; positive-edge trigger
[1]
Typical values are measured at Tamb = 25 °C.
[2]
tpd is the same as tPHL and tPLH.
[3]
Typical value measured at VCC = 3.3 V.
[4]
Typical values are measured at VCC = 5.0 V.
[5]
CPD is used to determine the dynamic power dissipation PD = CPD VCC2 fi + (CL VCC2 fo) (PD in W), where:
fi = input frequency in MHz;
fo = output frequency in MHz;
(C
L VCC
2
f
o) = sum of outputs;
CL = output load capacitance in pF;
VCC = supply voltage in V.
trec
recovery time
nRD; see Figure 7
VCC = 1.2 V
-
5
-
ns
VCC = 2.0 V
14
2
-
15
-
ns
VCC = 2.7 V
10
1
-
11
-
ns
VCC = 3.0 V to 3.6 V
81
-
9
-
ns
VCC = 4.5 V to 5.5 V
61
-
7
-
ns
tsu
set-up time
nD to nCP; see Figure 6
VCC = 1.2 V
-
10
-
ns
VCC = 2.0 V
22
4
-
26
-
ns
VCC = 2.7 V
12
3
-
15
-
ns
VCC = 3.0 V to 3.6 V
82
-
10
-
ns
VCC = 4.5 V to 5.5 V
61
-
8
-
ns
th
hold time
nD to nCP; see Figure 6
VCC = 1.2 V
-
10
-
ns
VCC = 2.0 V
3
2-
3
-
ns
VCC = 2.7 V
3
2-
3
-
ns
VCC = 3.0 V to 3.6 V
3
2-
3
-
ns
VCC = 4.5 V to 5.5 V
3
2-
3
-
ns
fmax
maximum
frequency
nCP; see Figure 6
VCC = 2.0 V
14
40
-
12
-
MHz
VCC = 2.7 V
50
90
-
40
-
MHz
VCC = 3.0 V to 3.6 V
60
100
-
48
-
MHz
VCC = 4.5 V to 5.5 V
70
110
-
56
-
MHz
CPD
power
dissipation
capacitance
VI =GND to VCC
-24
-
pF
Table 7.
Dynamic characteristics …continued
GND (ground = 0 V): for test circuit, see
Symbol Parameter
Conditions
40 C to +85 C
40 C to +125 C
Unit
Min
Typ[1]
Max
Min
Max
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