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參數(shù)資料
| 型號(hào)： | 934024210135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.4 A, 600 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, 100H03, 2 PIN |
| 文件頁數(shù)： | 10/14頁 |
| 文件大?。?/td> | 113K |
| 代理商： | 934024210135 |
1999 Nov 11
5
Philips Semiconductors
Product specication
Ultra-fast soft-recovery
controlled avalanche rectiers
BYD57 series
GRAPHICAL DATA
BYD57D to M
a = 1.42; VR =VRRMmax; δ = 0.5.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
0
40
80
120
160
200
0
0.4
0.8
1.2
1.6
2.0
T
( C)
tp
o
I F(AV)
(A)
MSA961
BYDU and V
a = 1.42; VR =VRRMmax; δ = 0.5.
Switched mode application.
handbook, halfpage
0
200
2.0
0
0.4
MGM273
0.8
1.2
1.6
40
80
120
160
IF(AV)
(A)
Ttp (°C)
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
BYD57D to M
a = 1.42; VR =VRRMmax; δ = 0.5.
Device mounted as shown in Fig.17.
Switched mode application.
Fig.4
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
0
40
80
120
160
200
0
0.1
0.2
0.3
0.4
0.5
Tamb ( C)
o
I F(AV)
(A)
MSA960
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
BYD57U and V
a = 1.42; VR =VRRMmax; δ = 0.5.
Device mounted as shown in Fig.17.
Switched mode application.
handbook, halfpage
0
0.6
0.4
0.2
0
200
40
80
120
160
MGM272
IF(AV)
(A)
Tamb (°C)
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