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參數(shù)資料
| 型號： | 934024210135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.4 A, 600 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, 100H03, 2 PIN |
| 文件頁數(shù)： | 7/14頁 |
| 文件大小： | 113K |
| 代理商： | 934024210135 |
1999 Nov 11
2
Philips Semiconductors
Product specication
Ultra-fast soft-recovery
controlled avalanche rectiers
BYD57 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Shipped in 8 mm embossed tape
Smallest surface mount rectifier
outline.
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec
(1)
technology. The SOD87 is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
MAM061
ka
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD57D
200
V
BYD57G
400
V
BYD57J
600
V
BYD57K
800
V
BYD57M
1000
V
BYD57U
1200
V
BYD57V
1400
V
VR
continuous reverse voltage
BYD57D
200
V
BYD57G
400
V
BYD57J
600
V
BYD57K
800
V
BYD57M
1000
V
BYD57U
1200
V
BYD57V
1400
V
IF(AV)
average forward current
Ttp =85 °C; see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD57D to M
1.0
A
BYD57U and V
1.2
A
IF(AV)
average forward current
Tamb =60 °C; PCB mounting (see
Fig.17); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD57D to M
0.4
A
BYD57U and V
0.4
A
IFRM
repetitive peak forward current
Ttp =85 °C; see Figs 6 and 7
BYD57D to M
8.5
A
BYD57U and V
11
A
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