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參數(shù)資料
| 型號： | 934030880126 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 170 mA, 300 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, SPT, TO-92 VARIANT, 3 PIN |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 75K |
| 代理商： | 934030880126 |
1995 Apr 07
2
Philips Semiconductors
Product specication
P-channel enhancement mode
vertical D-MOS transistors
BSP304; BSP304A
FEATURES
Direct interface to C-MOS, TTL etc.
High speed switching
No secondary breakdown.
APPLICATIONS
Intended for use as a Line current interruptor in
telephone sets and for applications in relay, high speed
and line transformer drivers.
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a TO-92 variant package.
PINNING - TO-92 variant
PIN
SYMBOL
DESCRIPTION
BSP304
1
g
gate
2
d
drain
3
s
source
BSP304A
1
s
source
2
g
gate
3
d
drain
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline and symbol.
handbook, halfpage
s
d
g
MAM144
1
3
2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
300
V
VGSO
gate-source voltage (DC)
open drain
±20
V
VGSth
gate-source threshold voltage
ID = 1 mA; VDS =VGS
1.7
2.55
V
ID
drain current (DC)
170
mA
RDSon
drain-source on-state resistance
ID = 170 mA;
VGS = 10 V
17
Ptot
total power dissipation
up to Tamb =25 °C
1W
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