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參數(shù)資料
| 型號(hào)： | 934030880126 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 170 mA, 300 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, SPT, TO-92 VARIANT, 3 PIN |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 934030880126 |
1995 Apr 07
6
Philips Semiconductors
Product specication
P-channel enhancement mode
vertical D-MOS transistors
BSP304; BSP304A
Fig.10 Drain-source on-state resistance as a
function of drain current; typical values.
Tj =25 °C.
handbook, halfpage
0
10
20
30
40
50
60
1
101010
ID (mA)
VGS = 3 V
4 V
5 V
7 V
10 V
MLC692
23
6 V
R DSon
(
)
Fig.11 Temperature coefficient of gate-source
threshold voltage.
Typical VGSth at ID = 1 mA; VDS =VGS.
k
V
GSth at Tj
V
GSth at 25 ° C
--------------------------------------
=
handbook, halfpage
0.8
0.9
1.0
1.1
0
50
100
150
50
k
T ( C)
j
o
MLC696
Fig.12 Temperature coefficient of drain-source
on-state resistance.
Typical RDSon at ID = 170 mA; VGS = 10 V.
k
R
DSon at Tj
R
DSon at 25 ° C
-----------------------------------------
=
handbook, halfpage
0
0.5
1
1.5
2
2.5
0
50
100
150
k
T ( C)
j
o
MLC695
50
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