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參數(shù)資料
| 型號： | 934030880126 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 170 mA, 300 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, SPT, TO-92 VARIANT, 3 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 934030880126 |
1995 Apr 07
3
Philips Semiconductors
Product specication
P-channel enhancement mode
vertical D-MOS transistors
BSP304; BSP304A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics”
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead minimum 1 cm2.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
300
V
VGSO
gate-source voltage (DC)
open drain
±20
V
ID
drain current (DC)
170
mA
IDM
peak drain current
0.75
A
Ptot
total power dissipation
up to Tamb =25 °C; note 1
1W
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
125
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 10 A
300
V
VGSth
gate-source threshold voltage
VDS =VGS; ID = 1mA
1.7
2.55 V
IDSS
drain-source leakage current
VGS = 0; VDS = 240 V
100
nA
IGSS
gate leakage current
VGS = ±20 V; VDS =0
±100
nA
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 170 mA
17
yfs
forward transfer admittance
VDS = 25 V; ID = 170 mA
100
mS
Ciss
input capacitance
VGS = 0; VDS = 25 V; f = 1 MHz
60
90
pF
Coss
output capacitance
VGS = 0; VDS = 25 V; f = 1 MHz
15
30
pF
Crss
reverse transfer capacitance
VGS = 0; VDS = 20 V; f = 1 MHz
515
pF
Switching times (see Figs 2 and 3)
ton
turn-on time
VGS =0to 10 V; VDD = 50 V;
ID = 250 mA
510
ns
toff
turn-off time
VGS = 10 to 0 V; VDD = 50 V;
ID = 250 mA
15
30
ns
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