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參數(shù)資料
| 型號： | 934031450115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SMD, CMPAK-4 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 94K |
| 代理商： | 934031450115 |
1997 Sep 05
2
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FET
BF998WR
FEATURES
High forward transfer admittance
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
DESCRIPTION
Depletion type field-effect transistor in a plastic
microminiature SOT343R package with source and
substrate interconnected. The transistor is protected
against excessive input voltage surges by integrated
back-to-back diodes between gates and source.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING
PIN
SYMBOL
DESCRIPTION
1
s, b
source
2
d
drain
3g2
gate 2
4g1
gate 1
Fig.1 Simplified outline (SOT343R) and symbol.
Marking code: MB.
MAM198
Top view
21
34
s,b
d
g
1
g
2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
12
V
ID
drain current
30
mA
Ptot
total power dissipation
300
mW
Tj
operating junction temperature
150
°C
y
fs
forward transfer admittance
24
mS
Cig1-s
input capacitance at gate 1
2.1
pF
Crs
reverse transfer capacitance
f=1MHz
25
fF
F
noise gure
f = 800 MHz
1
dB
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