參數(shù)資料
型號(hào): 934031450115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: MICRO MINIATURE, PLASTIC, SMD, CMPAK-4
文件頁(yè)數(shù): 9/12頁(yè)
文件大小: 94K
代理商: 934031450115
1997 Sep 05
6
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FET
BF998WR
Fig.7
Forward transfer admittance as a function
of gate 1 voltage; typical values.
VDS = 8 V; Tamb =25 °C.
11
30
0
6
MGC474
12
18
24
0
V
(V)
G1-S
y fs
(mS)
3 V
2 V
1 V
0 V
V
= 4 V
G2 S
Fig.8
Output capacitance as a function of
drain-source voltage; typical values.
VG2-S = 4 V; f = 1 MHz; Tamb =25 °C.
414
1.5
1.0
1.1
MGC475
1.2
1.3
1.4
6
8
10
12
VDS(V)
Cos
(pF)
12 mA
10 mA
8 mA
ID =
Fig.9
Gate 1 input capacitance as a function of
gate 1-source voltage; typical values.
VDS = 8 V; VG2-S = 4 V; f = 1 MHz; Tamb =25 °C.
2.4
1.6
0.8
2.4
1.4
2.2
MGC476
0
2.0
1.8
1.6
Cis
(pF)
V
(mV)
G1-S
Fig.10 Gate 1 input capacitance as a function of
gate 2-source voltage; typical values.
VDS = 8 V; VG1-S = 0 V; f = 1 MHz; Tamb =25 °C.
64
2
2.4
2.3
2.1
2.0
2.2
MGC477
0
Cis
(pF)
V
(V)
G2-S
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